Mono-atomic steps on SiO2

For the first time mono-atomic steps have been observed on an insulating surface - a technologically important SiO2 layer - in UHV at T = 800 K in AFM mode with the Needle-Sensor AFM detection 2000 nm x 2000 nm

 
This result has been obtained with :
Variable Temperature UHV SPM

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SPM
Electronic Properties of Self-Organised Poly(3-dodecylthiophene)Monolayers Probe at the Single Chain Scale by Two-Dimensional Scanning Tunneling Spectroscopy Imaging