Multi-Module Cluster Tool

Combined SiGe-MBE, Metal MBE, Sputtering and Annealing for up to 4” Wafers

This system is capable of thin film deposition using PVD methods including electron beam evaporation, molecular beam deposition, sputter deposition and thermal evaporation methods. Additionally, in-situ characterisation techniques include angle-resolved monochromatic X-ray and ultraviolet photoelectron spectroscopy, scanning auger electron spectroscopy, atomic force and scanning tunnelling microscopy/spectroscopy. The system utilises 100 mm diameter wafers (for cleanroom process compatibility), and modified sample plates for the various deposition and characterisation techniques. Wafers are transported throughout the system in a UHV transfer system. Each deposition module has heating and rotational capability for the study of film uniformity and growth kinetics. Moreover, the system is expandable. The design permits the extension of the system to accommodate even more deposition or analytical techniques.

The Analysis Module is equipped with a number of surface sensitive analytical techniques including monochromatic X-ray Photoelectron Spectroscopy, Ultraviolet Photoelectron Spectroscopy, Scanning Auger Electron Spectroscopy and Scanning Probe Microscopy. Wafers are accommodated on the associated sample holder. Small samples (2.5 cm diameter) can also be separately introduced and characterised in the analytical module under heating and cooling conditions for growth kinetics’ studies, as well as depth profiling using either angle-resolved XPS or Ar-ion depth profiling with in-situ sample rotation for improved depth resolution. For in-situ film morphology studies, the AFM/STM module is capable of accommodating a 100 mm wafer. The deflection mode AFM instrumentation permits the study of workfunction variations on a nanoscale level utilising the Kelvin probe technique.

The Molecular Beam Epitaxy/Deposition Module is equipped with two 100cc shielded e-beam hearths for Si and Ge thin film deposition. Cross-beam quadrupole mass spectrometers as well as quartz crystal microbalance measurements are utilised to control the deposition flux in an automated control system. An integrated Staib RHEED system provides surface preparation and epi-growth quality information. Wafers can be heated to 1200° C with simultaneous rotation. Effusion cells for p-type and n-type dopants are also available on the module.

The Sputter Deposition Module is equipped with four 600 W confocal RF sputter magnetron sources to enable co-sputtering and combinatorial thin film composition studies with 2% thickness uniformity. Wafers can be heated to 1000° C in a reactive (O2) ambient for deposition of thin films. Wafers can also be rotated in-situ for wafer backside deposition. Gas injection is controlled through a 4 channel mass flowcontroller manifold, and pumping is controlled with an automated throttle

The Metal Film Deposition Module is equipped with a 4-pocket (8 cc) e-beam evaporation hearth and a QCM for fl ux measurement. Wafers can be heated to 1000° C and simultaneously rotated during deposition, and a shadow mask structure can be accommodated for in-situ fabrication of MIS structures on the wafer. This module is also equipped with a hydrogen cracker cell for surface preparation, and a low temperature organic deposition cell, for controlled deposition of organic molecules. The attached Annealing Process Module permits thermal processing of wafers up to 700° C under various ambients which are relevant for ex-situ device electrical characterisation (such as forming gas, UV/O3, as well as O2, N2, Ar, etc.).